zxtn649f document number ds31900 rev. 2 - 2 1 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 features ? bv ceo > 25v ? bv cbo > 35v ? i c(cont) = 3a continuous currrent ? v ce(sat) < 120mv @ 1a ? r ce(sat) = 77 m? ? p d = 0.725w ? 6a peak pulse current ? 25v forward blocking voltage ? complementary part number zxtp749f ? lead, halogen and antimony free, rohs compliant (note 1) ? ?green? devices (note 2) applications ? mosfet gate drivers ? power switches ? motor control mechanical data ? case: sot-23 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.008 grams (approximate) ordering information product marking reel size (inches) tape width (mm) quantity per reel ZXTN649FTA 1n7 7 8mm 3000 notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com marking information 1n7 = product type marking code top view device symbol pin configuration sot-23
zxtn649f document number ds31900 rev. 2 - 2 2 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 7 v continuous collector current (note 3) i c 3 a peak pulse current i cm 6 a base current i b 500 ma thermal characteristics characteristic symbol value unit power dissipation at t a = 25 c (note 4) p d 725 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 172 c/w thermal resistance, junction to lead @ t a = 25 c r jl 79 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 3. for a device surface mounted on 15mm x 15mm x 1.6mm fr4 pcb with high coverage of single sided 1 oz copper, in still air conditions 4. for device mounted on fr4 pcb measured at t 2 secs.
zxtn649f document number ds31900 rev. 2 - 2 3 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 thermal characteristics and derating information
zxtn649f document number ds31900 rev. 2 - 2 4 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo 35 110 v i c = 100 a collector-emitter breakdown voltage (note 5) v ( br ) ceo 25 35 v i c = 10 ma emitter-base breakdown voltage v ( br ) ebo 7 8.1 v i e = 100 a collector cutoff current i cbo < 1 50 0.5 na a v cb = 28v v cb = 28v, t amb =100 c emitter cutoff current i ebo < 1 50 ?na v eb = 5.6v static forward current transfer ratio (note 5) h fe 200 175 155 50 320 280 250 85 500 i c = 100ma, v ce = 2v i c = 1a, v ce = 2v i c = 2a, v ce = 2v i c = 6a, v ce = 2v collector-emitter saturation voltage (note 5) v ce(sat) 70 200 120 300 mv mv i c =1a, i b = 100mv i c = 3a, i b = 300mv base-emitter turn-on voltage (note 5) v be ( on ) 780 850 mv i c = 1a, v ce = 2v base-emitter saturation voltage (note 5) v be ( sat ) 900 1000 mv i c = 1a, i b = 100mv notes: 5. measured under pulsed conditions. pulse width 300 s. duty cycle 2%
zxtn649f document number ds31900 rev. 2 - 2 5 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 typical characteristics
zxtn649f document number ds31900 rev. 2 - 2 6 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 package outline dimensions suggested pad layout sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
zxtn649f document number ds31900 rev. 2 - 2 7 of 7 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated zxtn649f npn low v ce(sat) transistor in sot-23 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any customer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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